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Preparation of fixed abrasive polishing pad and polishing applied research
2013-08-15 by seoer3
it is widely used in single crystal silicon substrate and the metal interconnect layer structure between the planarization layer and other processing. However, conventional CMP technology there are still some shortcomings and limitations, such as poor process stability, low efficiency, high cost and serious environmental pollution. Fixed abrasive chemical mechanical polishing technology came into being, it can fundamentally solve the lack of free abrasive polishing process, improve processing efficiency, improve the surface quality of the workpiece, reducing waste to deal with stress, protect the environment and reduce production costs. This article was prepared from a fixed abrasive polishing pad to proceed, through the polishing pad matrix analysis of the factors affecting performance, and explore its workpiece material removal rate and surface quality after machining impact and achieve high material removal rate and high machining accuracy consolidation abrasives polishing pad.
This paper work and achieve results is as follows:
1) proposed pad substrate properties (swelling rate, hardness) evaluation methods, the use of orthogonal experiment method to analyze the various components of the matrix characteristics. The results showed that: TMPTA swelling ratio of the substrate and wet state were particularly remarkable hardness, PUA wet the substrate hardness particularly significant influence.
2) describes two fixed abrasive polishing pad preparation method, and its polished performance were compared. To 2.5 ~ 5μm diamond as abrasive, abrasive prepared eight kinds of consolidation on K9 optical glass polishing pad and wafer polishing exploratory trial. The results showed that: the low swelling rate of the workpiece material removal rate helps to improve and reduce the surface roughness of the work piece; low hardness can be obtained wet low surface roughness and high material removal rate.
3) the use of specific swelling ratio and wet fixed abrasive polishing pad hardness silicon wafer, cell phone panel glass and K9 optical glass polishing experiment with traditional free abrasive polishing process to compare the results showed that: the current stage, CeO2 consolidation abrasive polishing pad on the wafer material removal rate is very low, and the phone on the K9 optical glass panel glass material removal nor abrasive polish such as free, but slightly better surface quality.
4) Comparison of diamond abrasives fixed abrasive polishing with free silicon and other materials, the results showed that: 5 ~ 10μm diamond fixed abrasive polishing pad material removal rate of silicon is three times the free abrasive polishing, while achieving the self-dressing function; fixed abrasive polishing abrasive particle size dependent on the absence of free abrasive polishing so strong, using 2.5 ~ 5μm and 5 ~ 10μm diamond abrasive polishing can get equally good surface quality; and from the surface after machining Scratches From analysis of two polishing polishing characteristics.
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